Xilinx 3000 pdf

Configuration Memory cell The static memory cell used for the configuration memory in the Field Programmable Gate Array has been designed specifically for high reliability and noise immunity the basic memory cell consists of two CMOS inverters plus a pass transistor used for writing and reading cell data. Documentos semelhantes a xilinx xc Anil Kumar Yerninti. Matt Tolman. John Michael Manlupig Pitoy. Suparna Shirke Kansakar. Kim Louise Guillermo.

Neepur Garg. Joshua Duffy. Pathricia Kasum. Mota Chashma. Jai Prakash Gurnani. Widya Isti Arianti. Iulian Enache. Gopalakrishna Devulapalli. Muhammad Shoaib. Populares em Areas Of Computer Science.

Sahar Pervez. Poojitha Polavarapu. Mithun Satyanarayana. Number of Macrocells :. Number of Logic Cells :. Number of Equivalent Gates :. Organization :. Operating Temperature-Min :.

Operating Temperature-Max :. Pin Count :. Power Supplies :. Package Code :. Package Style :. Package Shape :. Package Equivalence Code :. Programmable Logic Type :. Peak Reflow Temperature :. RAM Bits :. Re-programmability Support :. Speed Grade :. Sub Category :. Surface Mount :. Screening Level :. Seated Height-Max :.

Supply Voltage-Nom :. Supply Voltage-Min :. Supply Voltage-Max :. Supplier Device Package :. Technology :. Total RAM Bits :. Terminal Form :. Terminal Pitch :. Terminal Finish :. Terminal Position :. Time Peak Reflow Temperature-Max :. Voltage - Supply :. Width :. Product Features. Product Functions.

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Is this content inappropriate? Report this Document. Flag for inappropriate content. Download now. Original Title: Xilinx Xc Related titles. Carousel Previous Carousel Next. PDF primary-whatsapp-media-whatsapp-documents-vlsilabquest. Jump to Page. Search inside document. On-chip crystal Oscillator. Over 20 different Packaging Options. Configuration Memory cell The static memory cell used for the configuration memory in the Field Programmable Gate Array has been designed specifically for high reliability and noise immunity the basic memory cell consists of two CMOS inverters plus a pass transistor used for writing and reading cell data.

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